Product Summary
The IRFR9024NTR is a Single P-Channel HEXFET Power MOSFET. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRFR9024NTR is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRFR9024NTR absolute maximum ratings: (1)Continuous Drain Current, VGS @ -10V:-11A; (2)Continuous Drain Current, VGS @ -10V:-8A; (3)Pulsed Drain Current:-44A; (4)Power Dissipation:38W; (5)Linear Derating Factor:0.30W/℃; (6)Gate-to-Source Voltage:±20V ; (7)Single Pulse Avalanche Energy:62mJ; (8)Avalanche Current:-6.6A; (9)Repetitive Avalanche Energy:3.8mJ; (10)Peak Diode Recovery dv/dt:-10V/ns; (11)Operating Junction and Storage Temperature Range:-55 to +150℃.
Features
IRFR9024NTR features: (1)Ultra Low On-Resistance; (2)P-Channel; (3)Surface Mount; (4)Advanced Process Technology; (5)Fast Switching; (6)Fully Avalanche Rated.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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IRFR9024NTR |
International Rectifier |
MOSFET MOSFET, P-CHANNEL, -55V, 11A, 175 mOhm, 12.7 nC Qg, D-Pak |
Data Sheet |
Negotiable |
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IRFR9024NTRL |
MOSFET P-CH 55V 11A DPAK |
Data Sheet |
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IRFR9024NTRLPBF |
International Rectifier |
MOSFET MOSFT PCh -55V 11A 175mOhm 12.7nC |
Data Sheet |
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IRFR9024NTRPBF |
International Rectifier |
MOSFET |
Data Sheet |
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IRFR9024NTRRPBF |
International Rectifier |
MOSFET |
Data Sheet |
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IRFR9024NTRR |
MOSFET P-CH 55V 11A DPAK |
Data Sheet |
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