(China (Mainland))
Product Summary
The FDP5N50 is an N-Channel enhancement mode power field effect transistor. It is produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. The FDP5N50 is well suited for high efficient switched mode power suppliesand active power factor correction.
Parametrics
FDP5N50 absolute maximum ratings: (1)VDSS, Drain to Source Voltage: 500 V; (2)VGSS, Gate to Source Voltage: ±30 V; (3)ID, Drain Current: 5A; (4)IDM, Drain Current - Pulsed: 20A; (5)EAS, Single Pulsed Avalanche Energy: 225 mJ; (6)IAR Avalanche Current: 5 A; (7)EAR Repetitive Avalanche Energy: 8.5 mJ; (8)dv/dt Peak Diode Recovery dv/dt: 4.5 V/ns; (9)PD Power Dissipation: 85 W; (10)TJ, TSTG, Operating and Storage Temperature Range: -55 to +150℃; (11)TL, Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds: 300℃.
Features
FDP5N50 features: (1)RDS(on) = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2.5A; (2)Low gate charge ( Typ. 11nC); (3)Low Crss ( Typ. 5pF); (4)Fast switching ; (5)100% avalanche tested; (6)Improved dv/dt capability; (7)RoHS compliant.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FDP5N50 |
Fairchild Semiconductor |
MOSFET 500V N-Channel |
Data Sheet |
Negotiable |
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FDP5N50NZ |
Fairchild Semiconductor |
MOSFET N-Chan UniFET2 500V |
Data Sheet |
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