Product Summary
The FGA15N120 is a 1200V NPT Trench IGBT. It uses Fairchild proprietary trench design and advanced NPT technology, the FGA15N120 offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. The FGA15N120 is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc.
Parametrics
FGA15N120 absolute maximum ratings: (1)VCES Collector-Emitter Voltage: 1200 V; (2)VGES Gate-Emitter Voltage: ±20 V; (3)IC Collector Current @ TC = 25℃: 30 A; Collector Current @ TC = 100℃: 15 A; (4)ICM Pulsed Collector Current: 45 A; (5)IF Diode Continuous Forward Current @ TC = 100℃: 15 A; (6)IFM Diode Maximum Forward Current: 45 A; (7)PD Maximum Power Dissipation @ TC = 25℃: 186 W; Maximum Power Dissipation @ TC = 100℃: 74 W; (8)TJ Operating Junction Temperature: -55 to +150 ℃; (9)Tstg Storage Temperature Range: -55 to +150 ℃; (10)TL Maximum Lead Temp. for soldering Purposes, 1/8 from case for 5 seconds: 300 ℃.
Features
FGA15N120 features: (1)NPT Trench Technology, Positive temperature coefficient; (2)Low saturation voltage: VCE(sat), typ = 1.9V @ IC = 15A and TC = 25℃; (3)Low switching loss: Eoff, typ = 0.6mJ @ IC = 15A and TC = 25℃; (4)Extremely enhanced avalanche capability.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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FGA15N120AND |
Other |
Data Sheet |
Negotiable |
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FGA15N120ANDTU |
Fairchild Semiconductor |
IGBT Transistors NPT IGBT |
Data Sheet |
Negotiable |
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FGA15N120ANTDTU_F109 |
Fairchild Semiconductor |
IGBT Transistors 1200V NPT Trench |
Data Sheet |
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FGA15N120ANTDTU |
Fairchild Semiconductor |
IGBT Transistors 1200V NPT Trench IGBT |
Data Sheet |
Negotiable |
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FGA15N120ANTD |
Other |
Data Sheet |
Negotiable |
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FGA15N120FTD |
Other |
Data Sheet |
Negotiable |
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FGA15N120FTDTU |
Fairchild Semiconductor |
IGBT Transistors 1200V 15A Field Stop Trench |
Data Sheet |
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