(China (Mainland))
Product Summary
The IIR2113-1 is high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced
output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic
inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse
current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high
frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side
configuration which operates up to 500 or 600 volts.
Parametrics
IR2113-1Parametrics:
Packaging
Tube
Configuration
High and Low Side, Independent
Input Type
Non-Inverting
Delay Time
120ns
Current - Peak
2.5A
Number of Configurations
1
Number of Outputs
2
High Side Voltage - Max (Bootstrap)
600V
Voltage - Supply
10 V ~ 20 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Through Hole
Package/Case
14-DIP (0.300", 7.62mm), 13 Leads
Supplier Device Package
16-DIP, 15 Leads
Features
IR2113-1 Features:
- Floating channel designed for bootstrap operation
Fully operational to +500V or +600V
Tolerant to negative transient voltage
dV/dt immune
- Gate drive supply range from 10 to 20V
- Undervoltage lockout for both channels
- 3.3V logic compatible
Separate logic supply range from 3.3V to 20V
Logic and power ground ±5V offset
- CMOS Schmitt-triggered inputs with pull-down
- Cycle by cycle edge-triggered shutdown logic
- Matched propagation delay for both channels
- Outputs in phase with inputs
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 IR2113-1PBF |
International Rectifier |
Power Driver ICs |
Data Sheet |
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 |
IR2113-1 |
|
IC MOSFET DRVR HI/LO SIDE 14-DIP |
Data Sheet |
Negotiable |
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