(China (Mainland))
Product Summary
The MG15J6ES1 is an insulated gate bipolar transistor.
Parametrics
MG15J6ES1 absolute maximum ratings: (1)Collector-Emitter Voltage VcES: 600 V; (2)Gate-Emitter Voltage VGES: ±20 V; (3)Collector Current DC Ic: 15 A; (4)Collector Current 1ms Icp: 30A; (5)Forward Current DC lF: 15 A; (6)Forward Current 1ms Ifm: 30A; (7)Collector Power Dissipation Pc: 80 W; (8)Junction Temperature Ti: 150℃; (9)Storage Temperature Range Tstg: -40 to 125 ℃; (10)Isolation Voltage VIsol: 2500 (AC 1 Minute)V.
Features
MG15J6ES1 features: (1)6 IGBTs are built into 1 package; (2)High speed: tf = 0.35ns (Max.)(Ic = 15A)V= 0.15ns (Max.)(Ic = 15A); (3)Low saturation voltage: VCE (sat)= 3.5V (Max.)(IF = 15A); (4)The electrodes are isolated from case.
Diagrams
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