NAND512W3A2DN6

NAND Flash Memory, TSOP48, 512 Mbit, 2.7 to 3.6V, 200us, copy back program mode

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Price:: US $2.26~2.42 / piece [Get Latest Price]

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	US $2.26~2.42

PartNumber:: NAND512W3A2DN6

Brand:: STMicroelectronics - ST | Pack: TSOP | D/C: 10+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2012-01-02

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Part Number:NAND512W3A2DN6
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Product Summary

The NAND512W3A2DN6 is a non-volatile Flash memory that uses the Single Level Cell (SLC) NAND cell technology. The NAND512W3A2DN6 features an open-drain Ready/Busy output that can be used to identify if the Program/Erase/Read (P/E/R) Controller is currently active. The use of an open-drain output allows the Ready/Busy pins from several memories to be connected to a single pull-up resistor.

Parametrics

NAND512W3A2DN6 absolute maximum ratings: (1)Temperature Under Bias: -50 to 125 ℃; (2)Storage Temperature: -65 to 150 ℃; (3)Input or Output Voltage: -0.6 to 2.7 V at 1.8V devices, -0.6 to 4.6 V at 3 V devices; (4)Supply Voltage: -0.6 to 2.7 V at 1.8V devices, -0.6 to 4.6 V at 3 V devices.

Features

NAND512W3A2DN6 features: (1)high density nand flash memories; (2)nand interface; (3)supply voltage: 1.8V device: VDD = 1.7 to 1.95V, 3.0V device: VDD = 2.7 to 3.6V; (4)page read / program: Random access: 12μs (max), Sequential access: 50ns (min), Page program time: 200μs (typ); (5)copy back program mode: Fast page copy without external buffering; (6)fast block erase: Block erase time: 2ms (Typ); (7)status register; (8)electronic signatur.