(China (Mainland))
Product Summary
The P75N02LDG is an N-Channel Logic Level Enhancement Mode Field Effect Transistor.
Parametrics
P75N02LDG absolute maximum ratings: (1)Gate-Source Voltage:±20V; (2)Continuous Drain Current:75A; (3)Pulsed Drain Current:170A; (4)Avalanche Current:60A; (5)Avalanche Energy:140mJ; (6)Repetitive Avalanche Energy:5.6mJ; (7)Power Dissipation:65W; (8)Operating Junction & Storage Temperature Range:-55 to 150℃
Features
P75N02LDG features: (1)Drain-Source Breakdown Voltage:25V; (2)Gate Threshold Voltage:1.0V to 3.0V; (3)Gate-Body Leakage:±250nA; (4)Zero Gate Voltage Drain Current:25uA; (5)On-State Drain Current:35A.
Diagrams
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 P75N02LD |
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Negotiable |
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P75N02LS |
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Negotiable |
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P75N02LSG |
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Negotiable |
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