Product Summary

The PH163112G is a SMD Transformer module.

Parametrics

PH163112G absolute maximum ratings: (1)Inductance: 350 μH; (2)Turn Ratio: 1 : 1; (3)Leakage inductance: 0.5 mH; (4)Interwinding Capacitance: 28 pF; (5)DC: 0.7 W; (6)Insertion Loss @1-100MHz: -1.0 dB; (7)Return Loss @1-30MHz: -16 dB; @60-80MHz: -10 dB; (8)Cross Talk @1-60MHz: -40 dB; @60-100MHz: -38 dB; (9)CMRR @1-60MHz: -45/-40 dB; @60-100MHz: -40/-35 dB; (10)Voltage Isolation: 1500 Vrms.

Features

PH163112G features: (1)Designed to meet IEEE802.3u requirement; (2)Turn ratio 1:1 on transmitter side; (3)G stand for RoHS; (4)Primary inductance 350mH min. with 8mA DC Bias; (5)Designed to meet IR 2600C peak requirement.

Diagrams

PH163112G schematic

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PH16030L T/R

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Data Sheet

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PH16030L,115

NXP Semiconductors

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Data Sheet

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Data Sheet

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Data Sheet

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PH16-3,81-K

Altech

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Data Sheet

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Data Sheet

0-1: $0.98
1-20: $0.93
20-100: $0.89
100-200: $0.83