(China (Mainland))
Product Summary
SRFETTM AO4712 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent
RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose
applications
Parametrics
AO4712 Parametrics:
Packaging
Tape & Reel (TR)
FET Type
MOSFET N-Channel, Schottky, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
11.2A (Ta)
Rds On (Max) @ Id, Vgs
14.5 mOhm @ 11.2A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250μA
Gate Charge (Qg) @ Vgs
31nC @ 10V
Input Capacitance (Ciss) @ Vds
1885pF @ 15V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
Other Names
785-1051-2
Features
AO4712 Features:
- VDS=30V
- ID (at VGS=10V) 13A
- RDS(ON)(at VGS=10V) < 11mΩ
- RDS(ON) (at VGS = 4.5V) < 14mΩ
- 100% UIS Tested
- 100% Rg Tested
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 AO4712 |
|
MOSFET N-CH 30V 11.2A 8-SOIC |
Data Sheet |
Negotiable |
|
||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
|
AO4701 |
|
MOSFET P-CH -30V -5A 8-SOIC |
Data Sheet |
Negotiable |
|
||||
 |
AO4702 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
AO4704 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
AO4706 |
|
MOSFET N-CH 30V 16.5A 8-SOIC |
Data Sheet |
Negotiable |
|
||||
|
AO4708 |
|
MOSFET N-CH 30V 15A 8-SOIC |
Data Sheet |
Negotiable |
|
||||
|
AO4710 |
|
MOSFET N-CH 30V 12.7A 8-SOIC |
Data Sheet |
Negotiable |
|
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