Product Summary
These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s
advanced PowerTrench- process that has been especially tailored to minimize on-state resistance and yet maintain superior
switching performance.
Parametrics
FDD8424H Parametrics:
Packaging
Tape & Reel (TR)
FET Type
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
40V
Current - Continuous Drain (Id) @ 25°C
9A, 6.5A
Rds On (Max) @ Id, Vgs
24 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Gate Charge (Qg) @ Vgs
20nC @ 10V
Input Capacitance (Ciss) @ Vds
1000pF @ 20V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
TO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device Package
TO-252-4L
Dynamic Catalog
N and P-Channel Logic Level Gate FETs
Other Names
FDD8424HTR
Features
FDD8424H Features:
- Q1: N-Channel
Max rDS(on)= 24m at VGS = 10V, ID = 9.0A
Max rDS(on) = 30m at VGS = 4.5V, ID = 7.0A
- Q2: P-Channel
Max rDS(on) = 54m at VGS = -10V, ID = -6.5A
Max rDS(on) = 70m at VGS = -4.5V, ID = -5.6A
Fast switching speed
RoHS Compliant
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
FDD8424H |
Fairchild Semiconductor |
MOSFET 40V Dual N & P-Ch PowerTrench MOSFET |
Data Sheet |
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FDD8424H_F085 |
Fairchild Semiconductor |
MOSFET PT2 P-Channel and PT4 N-channel |
Data Sheet |
Negotiable |
|
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FDD8424H_F085A |
Fairchild Semiconductor |
MOSFET Dual N&PCH PwrTrench +/- 40V,20A |
Data Sheet |
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