Product Summary

The MJD127T4G is a high-performance Complementary Darlington Power Transistor.

Parametrics

MJD127T4G Parametrics:

Packaging Tape & Reel (TR)
Transistor Type PNP - Darlington
Current - Collector (Ic) (Max) 8A
Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 4V @ 80mA, 8A
Current - Collector Cutoff (Max) 10μA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 4A, 4V
Power - Max 1.75W
Frequency - Transition 4MHz
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK-3
Dynamic Catalog PNP Transistors
Other Names MJD127T4GOS
MJD127T4GOS-ND
MJD127T4GOSTR

Features

MJD127T4G Features:

? Lead Formed for Surface Mount Applications in Plastic Sleeves
? Monolithic Construction With Built?in Base?Emitter Shunt Resistors
? High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc
? Epoxy Meets UL 94 V?0 @ 0.125 in
? ESD Ratings:
? Human Body Model, 3B > 8000 V
? Machine Model, C > 400 V
?  Pb?Free

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MJD127T4G
MJD127T4G
ON Semiconductor
Transistors Darlington 8A 100V Bipolar Power PNP
Data Sheet
0-1: $0.34
1-25: $0.30
25-100: $0.22
100-500: $0.18
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MJD112
MJD112
ON Semiconductor
Transistors Darlington 2A 100V Bipolar
Data Sheet
Negotiable 
MJD112/L
MJD112/L
Other

Data Sheet
Negotiable 
MJD112-001
MJD112-001
ON Semiconductor
Transistors Darlington 2A 100V Bipolar
Data Sheet
Negotiable 
MJD112-1G
MJD112-1G
ON Semiconductor
Transistors Darlington 2A 100V Bipolar Power NPN
Data Sheet
0-1: $0.32
1-25: $0.28
25-100: $0.21
100-500: $0.18
MJD112G
MJD112G
ON Semiconductor
Transistors Darlington 2A 100V Bipolar Power NPN
Data Sheet
0-1: $0.32
1-25: $0.28
25-100: $0.21
100-500: $0.18
MJD112RL
MJD112RL
ON Semiconductor
Transistors Darlington 2A 100V Bipolar
Data Sheet
Negotiable