Product Summary
The FDS6690A is a high-performance Single N-Channel, Logic-Level, PowerTrench MOSFET.
Parametrics
FDS6690A Parametrics:
Packaging
Tape & Reel (TR)
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
11A (Ta)
Rds On (Max) @ Id, Vgs
12.5 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Gate Charge (Qg) @ Vgs
16nC @ 5V
Input Capacitance (Ciss) @ Vds
1205pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC N
Dynamic Catalog
N-Channel Logic Level Gate FETs
Other Names
FDS6690ATR
Features
FDS6690A Features:
· 11 A, 30 V. RDS(ON) = 12.5 mW @ VGS = 10 V
RDS(ON) = 17.0 mW @ VGS = 4.5 V
· Fast switching speed
· Low gate charge
· High performance trench technology for extremely low RDS(ON)
· High power and current handling capability
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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FDS6690A |
Fairchild Semiconductor |
MOSFET SO-8 SGL N-CH 30V |
Data Sheet |
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FDS6690A_Q |
Fairchild Semiconductor |
MOSFET SO-8 SGL N-CH 30V |
Data Sheet |
Negotiable |
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FDS6690AS |
Fairchild Semiconductor |
MOSFET 30V NCH POWER TRENCH SYNCFET |
Data Sheet |
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FDS6690AS_NBNU001 |
Fairchild Semiconductor |
MOSFET 30V N-Ch PowerTrench |
Data Sheet |
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