(China (Mainland))
Product Summary
The IHW30N100T is a high-performance IGBT.
Parametrics
IHW30N100T Parametrics:
Packaging
Tube
IGBT Type
Trench and Field Stop
Voltage - Collector Emitter Breakdown (Max)
1000V
Vce(on) (Max) @ Vge, Ic
1.7V @ 15V, 30A
Current - Collector (Ic) (Max)
60A
Current - Collector Pulsed (Icm)
90A
Power - Max
412W
Switching Energy
1.6mJ (off)
Input Type
Standard
Gate Charge
217nC
Td (on/off) @ 25°C
35ns/546ns
Test Condition
600V, 30A, 15 Ohm, 15V
Reverse Recovery Time (trr)
-
Package / Case
TO-247-3
Mounting Type
Through Hole
Supplier Device Package
PG-TO247-3
Other Names
IHW30N100TFKSA1
SP000086713
Features
IHW30N100T Features:
? 1.1V Forward voltage of antiparallel rectifier diode
? Specified for TJmax = 175°C
? TrenchStop and Fieldstop technology for 1000 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in VCE(sat)
? Low EMI
? Qualified according to JEDEC1 for target applications
? Application specific optimisation of inverse diode
? Pb-free lead plating; RoHS compliant
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 IHW30N100T |
Infineon Technologies |
IGBT Transistors LOW LOSS DuoPack 1000V 30A |
Data Sheet |
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Quantity | ||||||||||||
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IHW30N100R |
Infineon Technologies |
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Data Sheet |
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Infineon Technologies |
IGBT Transistors LOW LOSS DuoPack 1000V 30A |
Data Sheet |
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