(China (Mainland))
Product Summary
The IRFIB7N50A is a high-performance SMPS MOSFET.
Parametrics
IRFIB7N50A Parametrics:
Packaging
Tube
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
500V
Current - Continuous Drain (Id) @ 25°C
6.6A (Tc)
Rds On (Max) @ Id, Vgs
520 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Gate Charge (Qg) @ Vgs
52nC @ 10V
Input Capacitance (Ciss) @ Vds
1423pF @ 25V
Power - Max
60W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack, Isolated Tab
Supplier Device Package
TO-220-3
Other Names
*IRFIB7N50A
Features
IRFIB7N50A Features:
- Low Gate Charge Qg results in Simple Drive Requirement
- Improved Gate, Avalanche and dynamic dv/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Effective Coss specified ( See AN 1001)
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 IRFIB7N50A |
Vishay/Siliconix |
MOSFET N-Chan 500V 6.6 Amp |
Data Sheet |
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IRFIB7N50APBF |
Vishay/Siliconix |
MOSFET N-Chan 500V 6.6 Amp |
Data Sheet |
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