(China (Mainland))
Product Summary
The IXFN55N50 is a high-performance HiPerFETTM Power MOSFET.
Parametrics
IXFN55N50 Parametrics:
Packaging
Tube
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
500V
Current - Continuous Drain (Id) @ 25°C
55A
Rds On (Max) @ Id, Vgs
90 mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 8mA
Gate Charge (Qg) @ Vgs
330nC @ 10V
Input Capacitance (Ciss) @ Vds
9400pF @ 25V
Power - Max
625W
Mounting Type
Chassis Mount
Package / Case
SOT-227-4, miniBLOC
Supplier Device Package
SOT-227B
Dynamic Catalog
IXFN HiPerFET? MOSFET Series
Features
IXFN55N50 Features:
? International standard packages
? Encapsulating epoxy meets UL 94 V-0, flammability classification
? miniBLOC with Aluminium nitride isolation
? Low RDS (on)HDMOSTM process
? Rugged polysilicon gate cell structure
? Unclamped Inductive Switching (UIS)rated
? Low package inductance
? Fast intrinsic Rectifier
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 IXFN55N50 |
Ixys |
MOSFET 55 Amps 500V 0.08 Rds |
Data Sheet |
Negotiable |
|
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 |
IXFN55N50F |
Ixys |
MOSFET |
Data Sheet |
Negotiable |
|
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