(China (Mainland))
Product Summary
This devices is designed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates
a new vertical structure to the ST company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high efficiency converters.
Parametrics
STF11NM60N Parametrics:
| Packaging | Tube |
|---|---|
| FET Type | MOSFET N-Channel, Metal Oxide |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 450 mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Gate Charge (Qg) @ Vgs | 31nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 850pF @ 50V |
| Power - Max | 25W |
| Mounting Type | Through Hole |
| Package/Case | TO-220-3 Full Pack |
| Supplier Device Package | TO-220FP |
| Other Names |
497-5886-5 STF11NM60N-ND |
Features
STF11NM60N Features:
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 STF11NM60N |
STMicroelectronics |
MOSFET N-channel MOSFET |
Data Sheet |
Negotiable |
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STF11NM60ND |
STMicroelectronics |
MOSFET N-Ch, 600V-0.37ohms FDMesh 10A |
Data Sheet |
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