(China (Mainland))
Product Summary
The BCP69-16 is a PNP Silicon AF Transistor.
Parametrics
BCP69-16 absolute maximum ratings: (1)Collector-emitter voltage:20V; (2)Collector-emitter voltage:25V; (3)Collector-base voltage:25V; (4)Emitter-base voltage:5V; (5)DC collector current:1A; (6)Peak collector current:2A; (7)Base current:100mA; (8)Peak base current:200mA; (9)Total power dissipation:1.5W; (10)Junction temperature:150℃; (11)Storage temperature:-65 to 150℃.
Features
BCP69-16 features: (1)For general AF applications; (2)High collector current; (3)High current gain; (4)Low collector-emitter saturation voltage; (5)Complementary type: BCP68 (NPN).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 BCP69-16,115 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS MED PWR TAPE-7 |
Data Sheet |
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BCP69-16 T/R |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS MED PWR TAPE-7 |
Data Sheet |
Negotiable |
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