(China (Mainland))
Product Summary
The IXFN26N90 is a HiPerFET Power MOSFET. The applications of the device include DC-DC converters, Battery chargers, Switched-mode and resonant-mode power supplies, DC choppers and Temperature and lighting controls.
Parametrics
IXFN26N90 absolute maximum ratings: (1)VDSS: 900 V when TJ = 25 to 150℃; (2)VDGR: 900 V when TJ = 25 to 150℃; RGS = 1 MΩ; (3)VGS: ±20 V; (4)VGSM: ±30 V; (5)ID25: 26 A when TC = 25℃; (6)IDM: 104 A when TC = 25℃, pulse width limited by TJM; (7)IAR: 26 A when TC = 25℃; (8)EAR: 64 mJ when TC = 25℃; (9)EAS: 3 J when TC = 25℃; (10)dv/dt: 5 V/ns when IS≤IDM, di/dt≤100 A/μs, VDD≤VDSS,TJ≤150℃, RG = 2Ω; (11)PD: 600 W when TC = 25℃; (12)TJ: -55 to +150℃; (13)TJM: 150℃; (14)Tstg: -55 to +150℃; (15)VISOL: 2500 V~ when 50/60 Hz, RMS t = 1 min; 3000V~ when IISOL≤1 mA t = 1 s.
Features
IXFN26N90 features: (1)International standard package; (2)miniBLOC, with Aluminium nitride isolation; (3)Low RDS (on) HDMOSTM process; (4)Rugged polysilicon gate cell structure; (5)Unclamped Inductive Switching (UIS) rated; (6)Low package inductance; (7)Fast intrinsic Rectifier.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
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 IXFN26N90 |
Ixys |
MOSFET 900V 26A |
Data Sheet |
Negotiable |
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