(China (Mainland))
Product Summary
The SST39SF040-70-4C-PHE is a high-performance Memory IC.
Parametrics
SST39SF040-70-4C-PHE Parametrics:
Packaging
Tube
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
4M (512K x 8)
Speed
70ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
32-DIP (0.600", 15.24mm)
Supplier Device Package
32-PDIP
Dynamic Catalog
Parallel Flash SST39 MPF?
Other Names
SST39SF040704CPHE
Features
SST39SF040-70-4C-PHE Parametrics:
- Low Power Consumption*
- Active current: 5 mA (typical)
- Standby current: 3 μA (typical)
- Fast Programming*
-14 μs per word (typical)
- Flexible Erase Capability and Fast Erase Times*
- 2 KWord sector erase: 18 ms (typical)
- 32 KWord block erase: 18 ms (typical)
- Chip erase: 70 ms (typical)
- Small uniform sector sizes: 2 KWord and 32 KWord
- Commercial and industrial operating temperatures
- Endurance: 100,000 cycles (typical)
- Data Retention: 100 years (min)
- MPF+ Offers Additional Features
- Erase suspend
- Boot block
- Hardware reset features
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 SST39SF040-70-4C-PHE |
Microchip Technology |
Flash 512K X 8 70ns |
Data Sheet |
|
|
||||||||||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
 |
SST308 |
Vishay/Siliconix |
JFET 35V 12mA |
Data Sheet |
Negotiable |
|
||||||||||||
|
SST308-E3 |
Vishay/Siliconix |
JFET 35V 12mA |
Data Sheet |
Negotiable |
|
||||||||||||
|
SST308-T1 |
Vishay/Siliconix |
JFET 35V 12mA |
Data Sheet |
Negotiable |
|
||||||||||||
|
SST308-T1-E3 |
Vishay/Siliconix |
JFET 35V 12mA |
Data Sheet |
Negotiable |
|
||||||||||||
|
SST309 |
Vishay/Siliconix |
JFET 35V 12mA |
Data Sheet |
Negotiable |
|
||||||||||||
|
SST309-E3 |
Vishay/Siliconix |
JFET 35V 12mA |
Data Sheet |
Negotiable |
|
||||||||||||
