TLP741G

6-DIP, GaAs Ired & Photo-Thyristor, 400V, 10mA, 100 mW, TLP741G

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Price:: US $0.36~0.39 / piece [Get Latest Price]

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	US $0.36~0.39

PartNumber:: TLP741G

Brand:: Toshiba Semiconductor - Toshiba | Pack: DIP | D/C: 10+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2012-01-16

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Part Number:TLP741G
US $0.36 - 0.39
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Product Summary

The TLP741G is a GaAs Ired & Photo-Thyristor. It consists of a photo-thyristor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package.

Parametrics

TLP741G absolute maximum ratings: (1)Forward current IF: 60 mA; (2)Forward current derating (Ta ≥ 39℃) △IF / ℃: -0.7 mA / ℃; (3)Peak forward current (100μs pulse, 100pps) IFP: 1 A; (4)Power dissipation PD: 100 mW; (5)Power dissipation derating (Ta ≥ 25℃) △PD / ℃: -1.0 mW / ℃; (6)Reverse voltage VR: 5 V; (7)Junction temperature Tj: 125 ℃; (8)Storage temperature range Tstg: -55~125 ℃; (9)Operating temperature range Topr: -55~100 ℃; (10)Lead soldering temperature (10s) Tsol: 260 ℃; (11)Total package power dissipation PT: 250 mW; (12)Total package power dissipation derating(Ta ≥ 25℃) △PT /℃: -3.3 mW / ℃.

Features

TLP741G features: (1)Peak off-state voltage: 400V(min.); (2)Trigger LED current: 10mA(max.); (3)On-state current: 150mA(max.); (4)UL recognized: UL1577, file no. E67349; (5)BSI approved: BS EN60065: 2002; Certificate no. 8877; BS EN60950-1: 2002; Certificate no. 8878; (6)Isolation voltage: 4000Vrms(min.).