(China (Mainland))
Product Summary
The MG150Q2YS51 is an N channel IGBT. The applications of it include high power switching and motor control.
Parametrics
MG150Q2YS51 absolute maximum ratings: (1)collector-emitter voltage:1200V; (2)gate-emitter voltage:±20V; (3)collector current:IC:200/150A, ICP:400/300A; (4)forward current:IF:150A, IFM:300A; (5)collector power dissipation:1250W; (6)junction temperature:150℃; (7)storage temperature range:-40℃ to +125℃; (8)isolation voltage:2500V; (9)screw torque:3/3N.m.
Features
MG150Q2YS51 features: (1)high input impedance; (2)high speed:tf=0.3us(max.) @inductive load; (3)low saturation voltage: VCE(sat)=3.6V(max.); (4)enhancement-mode; (5)includes a complete half bridge in one package; (6)the electrodes are isolated from case.
Diagrams
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 MG150J1JS50 |
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MG150Q1JS43 |
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Data Sheet |
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MG150Q1JS44 |
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Data Sheet |
Negotiable |
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