Product Summary

The MRF237 is a silicon NPN RF power transistor. It is designed for large signal power amplifier applications operating to 225 MHz.

Parametrics

MRF237 absolute maximum ratings: (1)IC: 1.0 A; (2)VCBO: 36 V; (3)VCEO: 18 V; (4)PDISS: 8.0 W @ TC = 25 ℃; (5)TJ: -65 ℃ to +200 ℃; (6)TSTG: -65 ℃ to +200 ℃; (7)θJC: 22 ℃/W.

Features

MRF237 characteristics: (1)BVCEO: 18 V; (2)BVCES: 36 V; (3)BVEBO: 4.0 V; (4)ICBO: 0.25 mA; (5)hFE: 5.0; (6)COB: 15 to 20 pF; (7)GPE: 12 to 14dB; (8)η: 50% to 62%.

Diagrams

MRF237 dimensions

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MRF237
MRF237

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MRF20030
MRF20030

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MRF20030R
MRF20030R

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MRF20060
MRF20060

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MRF20060_1248487
MRF20060_1248487

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MRF20060R
MRF20060R

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MRF20060RS
MRF20060RS

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