(China (Mainland))
Product Summary
The SGW30N60 is a fast IGBT in NPT-technology.
Parametrics
SGW30N60 absolute maximum ratings: (1)Collector-emitter voltage, VCE: 600V; (2)DC collector current, TC = 25℃, IC: 41A; (3)DC collector current, TC = 100℃, IC: 30A; (4)Gate-emitter voltage, VGE: ±20V; (5)Power dissipation, TC = 25℃, Ptot: 350W; (6)Operating junction and storage temperature, Tj, Tstg: -55 to +150℃.
Features
SGW30N60 features: (1)75% lower Eoff compared to previous generationcombined with low conduction losses; (2)Short circuit withstand time 10 μs; (3)Designed for:- Motor controls- Inverter; (4)NPT-Technology for 600V applications offers; (5)very tight parameter distribution- high ruggedness, temperature stable behaviour- parallel switching capability.
Diagrams
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 SGW30N60HS |
Infineon Technologies |
IGBT Transistors HIGH SPEED NPT TECH 600V 30A |
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SGW30N60 |
Infineon Technologies |
IGBT Transistors FAST IGBT NPT TECH 600V 30A |
Data Sheet |
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